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參數資料
| 型號： | XQ1000-BD-000V |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | XO, clock |
| 英文描述： | 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator |
| 中文描述： | VCO, 5500 MHz - 6500 MHz |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 210K |
| 代理商： | XQ1000-BD-000V |
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2007 - Rev 17-Apr-07
Units
GHz
dBm
dBc/Hz
dBc/Hz
dBc
dBc
dBc
MHz/Volt
VDC
VDC
mA
Min.
5.5
-
-
-
-
-
-
-
-
+0.0
-
Typ.
-
+4.5
-97.0
-118.0
-20.0
-30.0
-40.0
60.0
-5.0
-
20
Max.
6.5
-
-
-
-
-
-
-
-
+6.0
25
5.5-6.5 GHz GaAs MMIC
Voltage Controlled Oscillator
Page 1 of 5
Features
On-Chip Resonator
+4.5 dBm Output Power
-97 dBc/Hz @ 100KHz Phase Noise
20mA @ -5.0V Bias Supply
100% On-Wafer, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Parameter
Supply Voltage (Vee1,2,3)
Supply Voltage (Vtune)
Supply Current (Iee1,2,3)
Supply Current (Itune)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Junction Temperature (Tjn)
-6.0 VDC
+6.0 VDC
30 mA
1 mA
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Junction temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband's 5.5-6.5 GHz GaAs HBT VCO is a fully
integrated oscillator MMIC with on-chip tuning diode and
resonator. This design is based on a cross coupled differential
pair with on-chip buffer amplifier and output balun. The use
of a high-Q resonator structure and integrated varactor
diodes results in optimum phase-noise performance. This
MMIC uses Mimix Broadband's 2 um GaAs HBT device model
technology to ensure low flicker (1/f) noise and high
reliability. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f)
Fundamental Output Power (Pout)
SSB Phase Noise @ 100 kHz Offset
SSB Phase Noise @ 1 MHz Offset
2nd Harmonic Suppression
3rd Harmonic Suppression
4th Harmonic Suppression
Frequency Pushing (Vee)
Supply Voltage (Vee)
Frequency Tuning Voltage (Vtune)
Supply Current (Iee) (Vee=-5.0V Typical)
Q1000-BD
XQ1000-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XQ1000-BD-EV1 | 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD | 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD-000V | 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD-EV1 | 5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1002-BD | 6.4-7.4 GHz GaAs MMIC Voltage Controlled Oscillator |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XQ1000-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1001-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:5.8-6.9 GHz GaAs MMIC Voltage Controlled Oscillator |
| XQ1002-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:6.4-7.4 GHz GaAs MMIC Voltage Controlled Oscillator |
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