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參數資料
| 型號： | XR1002-QB-0N00 |
| 廠商： | MIMIX BROADBAND INC |
| 元件分類： | 通信及網絡 |
| 英文描述： | 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
| 中文描述： | SPECIALTY TELECOM CIRCUIT, PQCC28 |
| 封裝： | 7 X 7 MM, ROHS COMPLIANT, PLASTIC, QFN 28 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 749K |
| 代理商： | XR1002-QB-0N00 |
Mimix Broadband’s 18.0-30.0 GHz GaAs MMIC receiver has a 12.0 dB gain
control range, a noise figure of 3.5 dB and 25.0 dB image rejection across
the band. This device is a three stage LNA followed by a single transistor
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.
At high signal levels the radio AGC system can be used to reduce the
receiver gain improving the IIP3 providing for minimum distortion at
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).
The image reject mixer eliminates the need for a bandpass filter after the
LNA to remove thermal noise at the image frequency. I and Q mixer
outputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 μm
GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
18.0-30.0 GHz GaAs Receiver
QFN, 7x7 mm
Page 1 of 10
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
14.0 dB Conversion Gain
3.5 dB Noise Figure
25.0 dB Image Rejection
Features
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
3
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
Attenuation
LO Input Drive (P
LO
)
Image Rejection
Noise Figure (NF)
Isolation LO/RF
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
Control Bias Voltage (Vg3)
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
Units
GHz
GHz
GHz
dB
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
mA
Min.
18.0
14.0
DC
-
-
0.0
+12.0
15.0
-
-
-
-
-1.0
-1.5
-
Typ.
-
-
-
10.0
14.0
-
+15.0
25.0
3.5
40.0
+4.0
+4.5
-0.5
-1.2
135
Max.
30.0
34.0
4.0
-
-
12.0
+18.0
-
-
-
-
+5.5
0.0
0.0
270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
November 2006 - Rev 03-Nov-06
R1002-QB
General Description
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| XR1002-QB-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm |
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