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參數資料
| 型號： | XU1000 |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 17.0-27.0 GHz GaAs MMIC Transmitter |
| 中文描述： | 17.0-27.0 GHz的砷化鎵單片發射機 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 243K |
| 代理商： | XU1000 |
Mimix Broadband
’
s 17.0-27.0 GHz GaAs MMIC
transmitter has a small signal conversion gain of 0.0
dB with a third order intercept of +12.0 dBm across
the band. The device is a single fundamental mixer
followed by a single stage amplifier. This MMIC uses
Mimix Broadband
’
s 0.15
μ
m GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
17.0-27.0 GHz GaAs MMIC
Transmitter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Input Return Loss LO (S11)
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (P
LO
)
Isolation LO/RF
Input Power for 1 dB Compression (P1dB)
Input Third Order Intercept (IIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
(1) Optional power bias Vd=5.5V, Id=45mA will typically yield improved P1dB.
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Fundamental Transmitter
Low DC Power Consumption
Optional Power Bias Configuration
0.0 dB Conversion Gain
+12.0 dBm Third Order Intercept (IIP3)
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Units
GHz
GHz
GHz
GHz
dB
dB
dB
dBm
dB
dBm
dBm
VDC
VDC
mA
Min.
17.0
17.0
15.0
DC
-
-
-
-
-
-
-
-
-1.0
-
Typ.
-
-
-
-
7.0
8.0
0.0
+12.0
10.0
+2.0
+12.0
+3.0
-0.5
23
Max.
27.0
27.0
29.0
2.0
-
-
-
-
-
-
-
+5.5
0.0
46
Chip Device Layout
Page 1 of 5
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
50 mA
+0.3 VDC
+10 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1,2
1,2
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
3
May 2005 - Rev 13-May-05
U1000
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