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參數(shù)資料
| 型號(hào)： | XU310 |
| 廠商： | CALOGIC LLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-Channel JFET High Frequency Amplifier |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | DIE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 24K |
| 代理商： | XU310 |
N-Channel JFET
HghFrequency Ampifier
U308 – U310
FEATURES
High Power Gain
Low Noise
Dynamic Range Greater The 100dB
Easily Matched to 75
Input
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -25V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Storage Temperature. . . . . . . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +150
o
C
Lead Temperature (Soldering, 10sec). . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . 4mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
U308-10
XU308-10
Package
Hermetic TO-52
Sorted Chips in Carriers
Temperature Range
-55
o
C to +150
o
C
-55
o
C to +150
o
C
C ORPORATION
PIN CONFIGURATION
D
S
(TO-52)
G, C
5021
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
U308
U309
U310
UNITS
TEST CONDITIONS
MIN
TYP MAX MIN
TYP MAX MIN
TYP MAX
I
GSS
Gate Reverse Current
-150
-150
-150
pA
V
GS
= -15V
-150
-150
-150
nA
V
GS
= 0
T
A
= 125
o
C
BV
GSS
Gate-Source Breakdown Voltage
-25
-25
-25
V
I
G
= -1
μ
A, V
DS
= 0
V
GS(off)
Gate-Source Cutoff Voltage
-1.0
-6.0
-1.0
-4.0
-2.5
-6.0
V
DS
= 10V, I
D
= 1nA
I
DSS
Saturation Drain Current (Note 1)
12
60
12
30
24
60
mA
V
DS
= 10V, V
GS
= 0
V
GS(f)
Gate-Source Forward Voltage
1.0
1.0
1.0
V
I
G
= 10mA, V
DS
= 0
g
fg
Common-Gate Forward
Transconductance (Note 1)
10
17
10
17
10
17
mS
V
DS
= 10V,
I
D
= 10mA
f = 1kHz
g
ogs
Common Gate Output Conductance
250
250
250
μ
S
C
gd
Drain-Gate Capacitance
2.5
2.5
2.5
pF
V
GS
= -10V,
V
DS
= 10V
f = 1MHz
(Note 2)
C
gs
Gate-Source Capacitance
5.0
5.0
5.0
e
n
Equivalent Short Circuit
Input Noise Voltage
10
10
10
nV
√
Hz
V
DS
= 10V,
I
D
= 10mA
f = 100Hz
(Note 2)
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