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參數資料
| 型號： | XX1004-BD |
| 廠商： | Mimix Broadband, Inc. |
| 英文描述： | 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| 中文描述： | 10.0-13.0/20.0-26.0 GHz的砷化鎵單片有源倍頻器 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 237K |
| 代理商： | XX1004-BD |
Mimix Broadband’s two stage 10.0-13.0/20.0-26.0 GHz
GaAs MMIC doubler has a +15.0 dBm output drive
and is an excellent LO doubler that can be used to
drive fundamental mixer devices. It is also well suited
to drive Mimix's XR1002 receiver device. This MMIC
uses Mimix Broadband’s 0.15 μm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
10.0-13.0/20.0-26.0 GHz GaAs MMIC
Active Doubler
Excellent Mixer Driver
2-Stage Active Design
Can be Used to Drive XR1002 Receiver
+15 dBm Output Drive
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Level at the Output
RF Input Power (RF Pin)
Output Power at +9.0 dBm Pin (Pout)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current
(Id1,2) (Vd=3.5V, Vg1=-0.7V, Vg2=-0.2 Typical)
Units
GHz
GHz
dB
dB
dBc
dBm
dBm
VDC
VDC
VDC
mA
Min.
10.0
20.0
-
-
-
-
-
-
-1.2
-1.2
-
Typ.
-
-
TBD
TBD
-30.0
+9.0
+15.0
+3.5
-0.7
-0.2
70
Max.
13.0
26.0
-
-
-
-
-
+5.5
+0.1
+0.1
100
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110 mA
+0.3 VDC
+15.0 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 6
1
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
February 2007 - Rev 16-Feb-07
X1004-BD
XX1004-BD
相關PDF資料 |
PDF描述 |
|---|---|
| XX1004-BD-000V | 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| XX1004-BD-EV1 | 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD | 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD-000V | 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD-EV1 | 8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
相關代理商/技術參數 |
參數描述 |
|---|---|
| XX1004-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| XX1004-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD-000V | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
| XX1005-BD-EV1 | 制造商:MIMIX 制造商全稱:MIMIX 功能描述:8.0-12.0/16.0-24.0 GHz GaAs MMIC Active Doubler |
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