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參數資料
| 型號： | YG855C12R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | 整流器 |
| 英文描述： | 120 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/6頁 |
| 文件大小： | 544K |
| 代理商： | YG855C12R |
1
YG855C12R
Maximum Rating and Characteristics
Maximum ratings (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Ratings
Units
Repetitive peak reverse voltage
VRRM
-
120
V
Isolating voltage
Viso
Terminals-to-case, AC.1min
1500
V
Average output current
Io
50Hz Square wave duty =1/2
Tc = 94C
20*
A
Non-repetitive forward surge current**
IFSM
Sine wave, 10ms 1shot
95
A
Operating junction temperature
Tj
-
150
C
Storage temperature
Tstg
-
-40 to +150
C
Note* Out put current of center tap full wave connection.
Note** Rating per element
Electrical characteristics (at Ta=25C unless otherwise specified.)
Item
Symbols
Conditions
Maximum
Units
Forward voltage***
VF
IF =10 A
0.98
V
Reverse current***
IR
VR =VRRM
175
A
Thermal resistance
Rth(j-c)
Junction to case
2.5
C/W
Note*** Rating per element
http://www.fujisemi.com
FUJI Diode
Mechanical characteristics
Item
Conditions
Maximum
Units
Mounting torque
Recommended torque
0.3 to 0.5
Nm
Approximate mass
-
1.7
g
Schottky Barrier Diode
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