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參數資料
型號: ZTE3
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 參考電壓二極管
英文描述: 3 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH
封裝: GLASS, DO-35, 2 PIN
文件頁數: 1/4頁
文件大小: 132K
代理商: ZTE3
Features
Silicon Stabilizer Diodes
Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In the
reverse direction, these devices show the behavior of
forward-biased silicon diodes.
The end of the ZTE device marked with the cathode ring
is to be connected: ZTE1.5 and ZTE2 to the negative
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the
positive pole of the supply voltage.
These diodes are also available in MiniMELF case with
the type designation LL1.5 … LL 5.1.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
DO-204AH (DO-35 Glass)
mi
n.
1.083
(
27.5)
mi
n.
1.083
(
2
7
.5)
max
..
150
(
3.8)
max.
Cathode
.020 (0.52)
Mark
max. .079 (2.0)
ZTE1.5 thru ZTE5.1
Voltage Stabilizers
Dimensions are in inches
and (millimeters)
6/28/01
Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Operating Current (see Table “Characteristics”)
Inverse Current
IF
100
mA
Power dissipation at Tamb = 25°CPtot
300(1)
mW
Junction temperature
TJ
150
°C
Storage temperature range
TS
– 55 to +150
°C
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage at IF = 10 mA
VF
––
1.1
V
Temperature Coefficient of the
ZTE1.5, ZTE2
α
VZ
––26
10–4/°C
stabilized voltage at IZ = 5 mA
ZTE2.4, ZTE5.1
α
VZ
––34
10–4/°C
Thermal resistance junction to ambient air
R
θJA
––
400(1)
°C/W
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