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參數資料
| 型號： | ZVN4106FTA |
| 元件分類： | TVS-瞬態抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 晶體管SOT23封裝貼片MOSFET的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 41K |
| 代理商： | ZVN4106FTA |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
0.2
A
3
A
Gate-Source Voltage
±
20
330
V
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
mW
-55 to +150
°C
MAX .
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DS S
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS (th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
I
DS S
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
Zero Gate Voltage Drain
Current
10
50
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
1
A
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
=500mA
V
GS
=5V, I
D
=200mA
Static Drain-Source On-State
Resistance (1)
2.5
5
Forward Transconductance(1)(2
)
g
fs
150
mS
V
DS
=25V, I
D
=250mA
Input Capacitance (2)
C
iss
C
oss
35
pF
Common Source Output
Capacitance (2)
25
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
T
d(on)
T
r
T
d(off)
T
f
5
ns
V
DD
≈
25V, I
D
=150mA
Rise Time (2)(3)
7
ns
Turn-Off Delay Time (2)(3)
6
ns
Fall Time (2)(3)
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
0
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4106F
3 - 399
D
G
S
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