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參數資料
| 型號： | ZVP3306E |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | DIP |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）決策支持系統|雙酯 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 112K |
| 代理商： | ZVP3306E |
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995
%
FEATURES
*
100 Volt V
DS
*
R
DS(on)
=20
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVN3310F
MR
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
-100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
75
mA
-1.2
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
P
tot
T
j
:T
stg
330
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-100
V
I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5
-3.5
V
I
D
=-1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
-20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1
-50
μ
A
μ
A
V
DS
=-100V, V
GS
=0
V
DS
=-80V, V
GS
=0V, T=125°C
(2)
On-State Drain Current(1)
I
D(on)
-300
mA
V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
20
V
GS
=-10V, I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50
mS
V
DS
=-25V, I
D
=-150mA
Input Capacitance (2)
C
iss
50
pF
Common Source Output
Capacitance (2)
C
oss
15
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
8
ns
V
DD
≈
-25V, I
D
=-150mA
Rise Time (2)(3)
t
r
8
ns
Turn-Off Delay Time (2)(3)
t
d(off)
8
ns
Fall Time (2)(3)
t
f
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVP3310F
D
G
S
3 - 436
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相關代理商/技術參數 |
參數描述 |
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| ZVP3306F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:Diodes Incorporated 功能描述:P CH DMOS FET, -60V, 90mA, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V ;RoHS Compliant: Yes |
| ZVP3306F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 |
| ZVP3306FTA | 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVP3306FTA-CUT TAPE | 制造商:DIODES 功能描述:ZVP3306F Series 60 V 14 Ohm P-Channel Enhancement Mode Vertical DMOS FET-SOT-223 |
| ZVP3306FTC | 功能描述:MOSFET P-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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