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參數資料
| 型號： | ZX3CDBS1M832 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 344K |
| 代理商： | ZX3CDBS1M832 |
SUMMARY
NPN Transistor
V
CEO
= 20V; R
SAT
= 47m ;
C
= 4.5A
V
R
= 40V; V
F
= 500mV (@1A); I
C
=1A
Schottky Diode
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other
key benefits
:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
Extremely Low Saturation Voltage
(150mV @1A)
H
FE
characterised up to 6A
I
C
= 4.5A Continuous Collector Current
Extremely Low V
F
, fast switching Schottky
3mm x 2mm MLP
APPLICATIONS
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
DEVICE MARKING
BS1
ZX3CDBS1M832
ISSUE 1 - JUNE 2002
MPPS Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
1
Cathode
Anode
B
C
E
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZX3CDBS1M832TA
7
8mm
3000
ZX3CDBS1M832TC
13
8mm
10000
ORDERING INFORMATION
3mm x 2mm Dual Die MLP
3mm x 2mm Dual MLP
underside view
PINOUT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ZX3CDBS1M832TA | 功能描述:兩極晶體管 - BJT PNP 20V/1A Sch Comb RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZX3CDBS1M832TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 4.5A I(C) | LLCC |
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| ZX3V3 | 制造商:YEASHIN 制造商全稱:YEASHIN 功能描述:500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators |
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