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參數資料
| 型號： | μPA809T |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 中文描述： | 微波低噪聲放大器NPN硅晶體管（微波低噪聲放大器npn型晶體管） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 55K |
| 代理商： | ΜPA809T |
SILICON TRANSISTOR
μ
PA809T
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC5193)
PACKAGE DRAWINGS
(Unit: mm)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA809T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA809T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
1995
PRELIMINARY DATA SHEET
Printed in J apan
Document No. ID-3643
(O.D. No. ID-9150)
Date Published April 1995 P
2.1±0.1
1.25±0.1
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
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