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參數資料
| 型號： | μPA826TF |
| 廠商： | NEC Corp. |
| 英文描述： | High-Frequecy Low-Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 高Frequecy低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數： | 1/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | ΜPA826TF |
The information in this document is subject to change without notice.
SILICON TRANSISTOR
P
PA826TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER
NPN SILICON EPITAXIAL TWIN TRANSISTOR
(WITH BUILT-IN 6-PIN 2
u
2SC4959) THIN -TYPE SMALL MINI MOLD
1997
Document No. P12691EJ1V0DS00 (1st edition)
Date Published July 1997 N
Printed in Japan
PRELIMINARY DATA SHEET
PIN CONFIGURATION (Top View)
FEATURES
Low noise and high gain
Operable at low voltage
Small feedback capacitance
C
re
= 0.4 pF TYP.
Built-in 2 transistors (2
u
2SC4959)
6-pin thin-type small mini mold package adopted
ORDERING INFORMATION
Part Number
Quantity
Packing Style
P
PA826TF
Loose products
(50 pcs)
P
PA826TF-T1
Taping
products
(3 kpcs/reel)
Remark
If you require an evaluation sample, please contact
an NEC Sales Representative (unit sample quantity
is 50 pcs).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
e
65 to 150
°C
Note
110 mW must not be exceeded for 1 element.
Caution is required concerning excess input, such as from static electricity, due to the high-precision
fabrication processes used for this device.
Embossed tape 8 mm wide.
Pin 6 (Q1 Base),
Pin 5 (Q2 Emitter),
Pin 4 (Q2 Base) face to perfora-
tion side of the tape.
PACKAGE DRAWINGS (Unit: mm)
B1
Q1
Q2
6
5
4
3
2
1
E2
B2
C1
E1
C2
PIN CONNECTIONS
1. Collector(Q1)
2. Emitter
3. Collector (Q2)
(Q1)
4. Base
5. Emitter (Q2)
6. Base
(Q2)
(Q1)
R
2
1
0
0
0
0
3
2
1
4
5
6
0
2.10±0.1
1.25±0.1
0
0
+
–
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