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參數資料
| 型號： | 1004MP |
| 英文描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 300MA I(C) | FO-58 |
| 中文描述： | 晶體管|晶體管|叩| 50V五（巴西）總裁| 300mA的一（c）|佛58 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 25K |
| 代理商： | 1004MP |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1004MP
4 Watts, 35 Volts, Pulsed
Avionics - 960-1215 MHz
GENERAL DESCRIPTION
The 1004MP is a COMMON BASE transistor capable of providing 4 Watts
of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is
specifically designed for pulsed Avionics amplifier applications. It utilizes
gold metalization andlow thermal resistance packaging to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55FU, STYLE 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 7 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 300 mAmps
Maximum Temperatures
Storage Temperature - 40 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 35 Volts
PW = 10
μ
s, DF = 1%
4.0
7.0
40
4.5
9.0
45
0.5
30:1
Watts
Watts
dB
%
BVebo
BVces
h
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic =10 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
50
20
3.3
5.0
25
Volts
Volts
pF
C/W
o
Issue May 1996
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