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參數(shù)資料
| 型號： | 114A1 |
| 英文描述： | Infrared Emitting Diodes (IRED) |
| 中文描述： | 紅外發(fā)光二極管（登記合格決定） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 29K |
| 代理商： | 114A1 |
GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
MIE-114A1
Description
Package Dimensions
The MIE-114A1 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A1 provides a broad range of
intensity selection .
Features
l
Selected to specific on-line intensity and
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
the MID-11422 of phototransistor .
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
Peak Forward Current(300pps,10
μ
s pulse)
75
mW
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
260
o
C for 5 seconds
radiant intensity ranges
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Unit: mm ( inches )
2.54 NOM.
(.100)
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
4.45±0.20
(.175±.008)
((.087)
2.22
C
1.0 MIN.
(.040)
0.5 TYP.
(.020)
SEE NOTE 3
1.22±0.10
(.048±.004)
C
A
5.72±0.2
(.225±.008)
12.7 MIN.
(.500)
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