- 您現在的位置：買賣IC網 > PDF目錄364257 > 1H8 (Won-Top Electronics Co., Ltd.) 1.0A MINIATURE HIGH EFFICIENCY RECTIFIER PDF資料下載
參數資料
| 型號： | 1H8 |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 1.0A MINIATURE HIGH EFFICIENCY RECTIFIER |
| 中文描述： | 安培微型高效整流 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 27K |
| 代理商： | 1H8 |
HIGH EFFICIENCY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capability
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.12 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
1H1
THRU
1H8
R-1
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 25
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
Amps
1.0
25
15
-65 to + 150
Amps
pF
0
C
1H1
1H2
UNITS
50
35
50
100
70
100
Volts
Volts
Volts
12
1H3
1H4
1H5
200
140
200
300
210
300
400
280
400
1H6
1H8
1H7
600
420
600
1000
700
1000
800
560
800
1H5P
400
280
400
50
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current
Average, Full Cycle .375” (9.5mm) lead length at T
L
= 55
o
C
Maximum Reverse Recovery Time (Note 1)
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
5.0
100
75
uAmps
uAmps
nSec
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
1H1
1H2
1.0
1H3
1H4
1H5
1H6
1H7
1.7
UNITS
1H8
1H5P
1.0
1.3
.787 (20.0)
MIN.
.106 (2.7)
.126 (3.2)
.787 (20.0)
MIN.
.102 (2.6)
.091 (2.3)
DIA.
.025 (0.65)
相關PDF資料 |
PDF描述 |
|---|---|
| 1H8 | TECHINCAL SPECIFICATIONS OF MINIATURE HIGH EFFICIENCY RECTIFIER |
| 1HN04CH | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 1HP04CH | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 1J4B41 | |
| 1JH46 | FAST RECOVERY (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1H-803-2-01 | 制造商:Concord Electronics Inc 功能描述: |
| 1H-892-2-044 | 制造商:Concord Electronics Inc 功能描述: |
| 1H8-B | 功能描述:整流器 1A 1000V 70ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1H8G | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:HIGH EFFICIENCY RECTIFIERS |
| 1H8-T | 功能描述:整流器 1A 1000V 70ns RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。