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參數資料
型號: 1N4151W
廠商: GE Security, Inc.
英文描述: SMALL SIGNAL DIODES
中文描述: 小信號二極管
文件頁數: 1/4頁
文件大小: 202K
代理商: 1N4151W
1N4151W
SMALL SIGNAL DIODES
FEATURES
¨
Silicon Epitaxial Planar Diode
¨
Fast switching diode.
¨
This diode is also available in other
case styles including the SOD-123 case
with the type designation 1N4151W and the Mini-MELF
case with the type designation LL4151.
MECHANICAL DATA
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Reverse Voltage
V
R
50
V
Peak Reverse Voltage
V
RM
75
V
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 C and f
3
50 Hz
I
O
150
(1)
mA
Surge Forward Current at t < 1 s and T
j
= 25 C
I
FSM
500
mA
Power Dissipation at T
amb
= 25 C
P
tot
410
(1)
mW
Junction Temperature
T
j
150
C
Storage Temperature Range
T
S
D 65 to +150
C
NOTES:
(1) Valid provided that electrodes are kept at ambient temperature
1/4/99
Dimensions in inches and (millimeters)
SOD-123
.022 (0.55)
m
.
.
.067 (1.70)
.055 (1.40)
m
min. .010 (0.25)
Cathode Mark
m
Top View
.
.
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