欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào)： 1N5521B
英文描述： LOW REVERSE LEAKAGE CHARACTERISTICS
中文描述： 低的反向漏電特性
文件頁數(shù)： 1/2頁
文件大小： 99K
代理商： 1N5521B
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C
B-C-D
SUFFIX
B-C-D SUFFIX
JEDEC
NOMINAL
ZENER
MAX. ZENER
MAXIMUM REVERSE
MAXIMUM
MAX. NOISE
REGULATION
LOW
TYPE
ZENER
TEST
IMPEDANCE
LEAKAGE CURRENT
DC ZENER
DENSITY
FACTOR
VZ
NUMBER
VOLTAGE
CURRENT
B-C-D SUFFIX
CURRENT
@1Z=250
A
CURRENT
VZ@ 1ZT
1ZT
ZZT @ 1ZT
lR
VR = VOLTS
1ZM
ND
VZ
1ZL
(NOTE 1)
(NOTE 2)
(NOTE 3)
(NOTE 4)
(NOTE 5)
NON & A-
B-C-D-
VOLTS
mAdc
OHMS
Adc
SUFFIX
mAdc
V/ HZ
VOLTS
mAdc
1N5518B
3.3
20
26
5.0
0.90
1.0
115
0.5
0.90
2.0
1N5519B
3.6
20
24
3.0
0.90
1.0
105
0.5
0.90
2.0
1N5520B
3.9
20
22
1.0
0.90
1.0
98
0.5
0.85
2.0
1N5521B
4.3
20
18
3.0
1.0
1.5
88
0.5
0.75
2.0
1N5522B
4.7
10
22
2.0
1.5
2.0
81
0.5
0.60
1.0
1N5523B
5.1
5.0
26
2.0
2.5
75
0.5
0.65
0.25
1N5524B
5.6
3.0
30
2.0
3.0
3.5
68
1.0
0.30
0.25
1N5525B
6.2
1.0
30
1.0
4.5
5.0
61
1.0
0.20
0.01
1N5526B
6.8
1.0
30
1.0
5.5
6.2
56
1.0
0.10
0.01
1N5527B
7.5
1.0
35
0.5
6.0
6.8
51
2.0
0.05
0.01
1N5528B
8.2
1.0
40
0.5
6.5
7.5
46
4.0
0.05
0.01
1N5529B
9.1
1.0
45
0.1
7.0
8.2
42
4.0
0.05
0.01
1N5530B
10.0
1.0
60
0.05
8.0
9.1
38
4.0
0.10
0.01
1N5531B
11.0
1.0
80
0.05
9.0
9.9
35
5.0
0.20
0.01
1N5532B
12.0
1.0
90
0.05
9.5
10.8
32
10
0.20
0.01
1N5533B
13.0
1.0
90
0.01
10.5
11.7
29
15
0.20
0.01
1N5534B
14.0
1.0
100
0.01
11.5
12.6
27
20
0.20
0.01
1N5535B
15.0
1.0
100
0.01
12.5
13.5
25
20
0.20
0.01
1N5536B
16.0
1.0
100
0.01
13.0
14.4
24
20
0.20
0.01
1N5537B
17.0
1.0
100
0.01
14.0
15.3
22
20
0.20
0.01
1N5538B
18.0
1.0
100
0.01
15.0
16.2
21
20
0.20
0.01
1N5539B
19.0
1.0
100
0.01
16.0
17.1
20
0.20
0.01
1N5540B
20.0
1.0
100
0.01
17.0
18.0
19
20
0.20
0.01
1N5541B
22.0
1.0
100
0.01
18.0
19.8
17
20
0.25
0.01
1N5542B
24.0
1.0
100
0.01
20.0
21.6
16
20
0.30
0.01
1N5543B
25.0
1.0
100
0.01
21.0
22.4
15
20
0.35
0.01
1N5544B
28.0
1.0
100
0.01
23.0
25.2
14
20
0.40
0.01
1N5545B
30.0
1.0
100
0.01
24.0
27.0
13
20
0.45
0.01
1N5546B
33.0
1.0
100
0.01
28.0
29.7
12
20
0.50
0.01
NOTE 1
No Suffix type numbers are +20% with guaranteed limits for only VZ, lR, and VF. Units
with “A” suffix are +10% with guaranteed limits for VZ, lR, and VF. Units with guaranteed limits for
all six parameters are indicated by a “B” suffix for +5.0% units, “C” suffix for +2.0% and “D” suffix
for +1.0%.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal to 10% of 1ZT.
NOTE 4
Reverse leakage currents are measured at VR as shown on the table.
NOTE 5
VZ is the maximum difference between VZ at lZT and VZ at lZL measured with
the device junction in thermal equilibrium at the ambient temperature of +25°C +3°C.
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
FIGURE 1
1N5518-1 THRU 1N5546B-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/437
LOW REVERSE LEAKAGE CHARACTERISTICS
LOW NOISE CHARACTERISTICS
DOUBLE PLUG CONSTRUCTION
METALLURGICALLYBONDED
1N5518 thru 1N5546D
and
1N5518B-1 thru 1N5546B-1
√
相關(guān)PDF資料
PDF描述
1N5521 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N5522B LOW REVERSE LEAKAGE CHARACTERISTICS
1N5522 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N5523B-1 DE9SII
1N5525B-1 LOW REVERSE LEAKAGE CHARACTERISTICS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5521B (DO35) 制造商:Microsemi Corporation 功能描述:LOW VOLTAGE AVALANCHE ZENER DO-35 SD - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 4.3V 500MW DO-35
1N5521B(DO35) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Voltage Avalanche Zener
1N5521B-1 制造商:CDI-DIODE 制造商全稱:Compensated Deuices Incorporated 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS
1N5521BTR-1 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes
1N5521BUR 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*
主站蜘蛛池模板： 乌兰县| 博白县| 印江| 托里县| 乌鲁木齐市| 许昌县| 新昌县| 巧家县| 宣恩县| 水城县| 迭部县| 盘山县| 天等县| 伽师县| 平湖市| 慈溪市| 沙雅县| 伽师县| 和硕县| 平武县| 南陵县| 潜山县| 乌什县| 咸丰县| 巴彦县| 皋兰县| 乌鲁木齐县| 噶尔县| 沐川县| 秀山| 钟山县| 德清县| 察雅县| 紫金县| 会泽县| 兴义市| 商河县| 东丰县| 台东市| 丹凤县| 韶山市|