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參數資料
| 型號： | 1N5551 |
| 廠商： | GE Security, Inc. |
| 英文描述： | glass passivated junction rectifier |
| 中文描述： | 玻璃鈍化結型整流器 |
| 文件頁數： | 1/28頁 |
| 文件大小： | 202K |
| 代理商： | 1N5551 |
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MIL-PRF-19500/420H
19 April 2004
SUPERSEDING
MIL-PRF-19500/420G
30 December 2002
PERFORMANCE SPECIFICATION SHEET
* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,
TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,
JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,
JANHCE, JANKCA, JANKCD, AND JANKCE
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.
1.3 Maximum ratings. Unless otherwise specified, T
C
= +25
°
C and ratings apply to all case outlines.
Col. 1
Col. 2
Col. 3
Col. 4
Type
V
(BR)
V
RWM
and
V
(BR)min
1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US
1,000
1,000
5
(1) Derate linearly at 41.6 mA/
°
C above T
L
= +55
°
C at L = .375 inch (9.53 mm).
(2) An I
O
of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the
maximum junction temperature at or below +200
°
C as proven by the junction temperature rise test (see 6.5).
Barometric pressure reduced:
1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).
1N5553, 1N5554 - 33 mmHg (70,000 feet).
(3) Does not apply to surface mount devices.
(4) Derate linearly at 25 mA/
°
C above T
A
= +55
°
C.
AMSC N/A
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
Col. 5
I
FSM
I
O
= 2 A dc
t
p
= 1/120 s
T
A
= +55
°
C
A(pk)
100
100
100
100
100
Col. 6
T
J
Col. 7
I
O2
T
A
=
+55
°
C
(2) (4)
A dc
3
3
3
3
3
Col. 8
T
STG
I
O1
T
L
= +55
°
C;
L = .375 inch
(1) (2) (3)
200
400
600
800
V dc
200
400
600
800
A dc
5
5
5
5
°
C
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
°
C
-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175
FSC 5961
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconduction@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil
.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5551/23 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 400V 3A 2-Pin Case G-4 T/R |
| 1N5551/4 | 功能描述:整流器 3.0 Amp 400 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5551C.TR | 功能描述:DIODE GEN PURP 400V 3A AXIAL 制造商:semtech corporation 系列:* 零件狀態:在售 標準包裝:1 |
| 1N5551-E3/54 | 功能描述:整流器 3.0 Amp 400 Volt RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5551JAN | 制造商:Microsemi Corporation 功能描述: 制造商:SEM 功能描述: |
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