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參數(shù)資料
| 型號： | 1N5616GP |
| 廠商： | GE Security, Inc. |
| 英文描述： | Glass Passivated Junction Fast Switching Rectifier(鈍化玻璃結(jié)型快速轉(zhuǎn)換結(jié)型整流器) |
| 中文描述： | 玻璃鈍化結(jié)快速開關(guān)整流器（鈍化玻璃結(jié)型快速轉(zhuǎn)換結(jié)型整流器） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 63K |
| 代理商： | 1N5616GP |
4/98
1N5615GP THRU 1N5623GP
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER
Reverse Voltage -
200 to 1000 Volts
Forward Current -
1.0 Ampere
FEATURES
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
Fast switching for high efficiency
1.0 Ampere operation at T
A
=55°C with no thermal
runaway
High temperature soldering guaranteed:
350°C/10seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case:
JEDEC DO-204AC molded plastic over glass body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.015 ounce, 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
1N
1N
1N
1N
1N
SYMBOLS
5615GP
5617GP
5619GP
5621GP
5623GP
UNITS
* Maximum repetitive peak reverse voltage
* Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55°C
* Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
*Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
* Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Amps
I
(AV)
1.0
Amp
I
FSM
50.0
Amps
V
F
1.2
0.5
25.0
250
25.0
45.0
Volts
T
A
=25°C
T
A
=100°C
I
R
μ
A
t
rr
C
J
R
Θ
JA
T
J
,T
STG
150
300
500
ns
pF
°C/W
°C
-65 to +175
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted
* JEDEC registered values
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0
(25.4)
MIN.
0.230 (5.8)
0.300 (7.6)
1.0
(25.4)
MIN.
DO-204AC
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
PATENTED*
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5616JANGI | 制造商:GI 功能描述:1N5616JAN S9H1B |
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| 1N5616JANTX | 制造商:Microsemi Corporation 功能描述: |
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| 1N5616US | 制造商:Microsemi Corporation 功能描述:Diode Switching 400V 1A 2-Pin A-MELF 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 400V 1A 2PIN D-5A - Bulk |
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