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參數資料
| 型號： | 1N5819-T |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1.0A SCHOTTKY BARRIER RECTIFIER |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 64K |
| 代理商： | 1N5819-T |
DS23001 Rev. 8 - 2
1 of 3
1N5817-1N5819
www.diodes.com
Diodes Incorporated
Features
1N5817 - 1N5819
1.0A SCHOTTKY BARRIER RECTIFIER
A
A
B
C
D
DO-41 Plastic
Min
Dim
A
B
C
D
Max
25.40
4.06
5.21
0.71
0.864
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
Lead Free Finish, RoHS Compliant (Note 5)
Mechanical Data
Case: DO-41
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Ordering Information: See Page 2
Marking: Type Number and Date Code
Weight: 0.3 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
1N5817
1N5818
1N5819
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
Forward Voltage (Note 2)
20
30
40
V
14
21
28
V
@ T
L
= 90 C
I
O
1.0
A
I
FSM
25
A
@ I
F
= 1.0A
@ I
F
= 3.0A
@ T
A
= 25 C
@ T
A
= 100 C
V
FM
0.450
0.750
0.550
0.875
1.0
10
110
15
50
0.60
0.90
V
Peak Reverse Leakage Current
at Rated DC Blocking Voltage (Note 2)
Typical Total Capacitance (Note 3)
Typical Thermal Resistance Junction to Lead (Note 4)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
I
RM
mA
C
T
R
JL
R
JA
T
j,
T
STG
pF
C/W
-65 to +125
C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5mm) lead length with 1.5 x 1.5" (38 x 38mm)
copper pads.
5. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5817M | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 1N5818M | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 1N5819M | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 1N5817 | Schottky Barrier Rectifier Diode(20V峰值反向電壓,1A,肖特基勢壘整流二極管) |
| 1N5818 | Schottky Barrier Rectifier Diode(30V峰值反向電壓,1A,肖特基勢壘整流二極管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1N5819-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 40V 1A 2-Pin DO-41 T/R |
| 1N5819-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER DIODE |
| 1N5819TA | 制造商:World Products 功能描述: |
| 1N5819-TB | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SCHOTTKY BARRIER RECTIFIER |
| 1N5819-T-CUT TAPE | 制造商:DIODES 功能描述:1N5819 Series 40 V 1 A Through Hole Schottky Barrier Rectifier - DO-41 |
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