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參數資料
| 型號： | 1SS200 |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | 1-4E2B, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 1SS200 |
1SS200
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
Low forward voltage
: VF (3) = 0.92V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 2.2pF (typ.)
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300 (*)
mA
Average forward current
IO
100 (*)
mA
Surge current (10ms)
IFSM
2 (*)
A
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
(*)
Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.61
―
VF (2)
―
IF = 10mA
―
0.74
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.92
1.20
V
IR (1)
―
VR = 30V
―
0.1
Reverse current
IR (2)
―
VR = 80V
―
0.5
A
Total capacitance
CT
―
VR = 0, f = 1MHz
―
2.2
4.0
pF
Reverse recovery time
trr
―
IF = 10mA (Fig.1)
―
1.6
4.0
ns
JEDEC
―
EIAJ
―
TOSHIBA
1-4E2B
Weight: 0.13g
Unit: mm
相關PDF資料 |
PDF描述 |
|---|---|
| 1SS201 | 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 1SS220-T1B | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS221-L | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS220-T2B | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS222-T2B | 0.1 A, SILICON, SIGNAL DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 1SS200(F) | 制造商:Toshiba 功能描述:0.1A 80V MINI Bulk 制造商:Toshiba 功能描述:Diode Switching 85V 0.3A 3-Pin Mini |
| 1SS200_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
| 1SS201 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS201(F) | 制造商:Toshiba 功能描述:0.1A 80V MINI Bulk |
| 1SS201_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
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