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參數(shù)資料
型號(hào): 1SS348
元件分類: 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.1 A, SILICON, SIGNAL DIODE, TO-236
封裝: S-MINI, 1-3G1B, SC-59, TO-236MOD, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 169K
代理商: 1SS348
1SS348
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS348
Low Voltage High Speed Switching
Low forward voltage
: VF (3) = 0.56V (typ.)
Low reverse current
: IR = 5μA (max)
Small package
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Power dissipation
P
200
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55~125
°C
Operating Temperature
Topr
40~100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.26
VF (2)
IF = 10mA
0.34
Forward voltage
VF (3)
IF = 100mA
0.56
0.70
V
Reverse current
IR (1)
VR = 80V
5
μA
Total capacitance
CT
VR = 0, f = 1MHz
45
100
pF
Marking
JEDEC
TD-236MOD
JEITA
SC-59
TOSHIBA
1-3G1B
Weight: 0.012g (typ.)
Unit: mm
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