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參數資料
| 型號： | 23A003 |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 26K |
| 代理商： | 23A003 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A003
0.3 Watts, 15 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The23A003 is a COMMON EMITTER transistor capable of providing 0.3
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, STYLE 2
B08
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 3.0 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.3 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
Ft
VSWR
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
Ic = 100 mA
Vcc = 15 Volts
Vce = 15V, Ic =100 mA
0.03
Watts
dB
GHz
Power Out
F = 2.3 GHz
0.3
Watts
10.0
4.2
11.0
4.5
10:1
BVebo
BVces
BVceo
h
Cob
θ
jc
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 20 mA
Vce = 5 V, Ic = 100 mA
Vcb = 20V, f = 1 MHz
50
20
20
Volts
Volts
Emitter to Base Breakdown
Ie = 2 mA
3.5
Volts
2.5
pF
C/W
45
o
Initial Issue November 1996
相關PDF資料 |
PDF描述 |
|---|---|
| 23A005 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 400MA I(C) | FO-41B |
| 23A008 | 0.5 WATTS, 20 VOLTS, CLASS A LINEAR TO 2300 MHz |
| 23A008-2 | 0.5 WATTS, 20 VOLTS, CLASS A LINEAR TO 2300 MHz |
| 23A017 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 800MA I(C) | FO-41BVAR |
| 23A025 | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 23A005 | 制造商:Microsemi Corporation 功能描述:23A005 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 23A-005G | 功能描述:板上安裝壓力/力傳感器 0-5psig BOTTOM PORT RoHS:否 制造商:Honeywell 工作壓力:0 bar to 4 bar 壓力類型:Gage 準確性:+ / - 0.25 % 輸出類型:Digital 安裝風格:Through Hole 工作電源電壓:5 V 封裝 / 箱體:SIP 端口類型:Dual Radial Barbed, Same sides |
| 23A008 | 制造商:Microsemi Corporation 功能描述:23A008 - Bulk 制造商:Microsemi Corporation 功能描述:TRANS BIPO 55BT-2 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| 23A008-2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:0.5 WATTS, 20 VOLTS, CLASS A LINEAR TO 2300 MHz |
| 23A-01 | 制造商:Aeroflex / Inmet 功能描述:ATTENUATOR - FIXED COAXIAL |
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