- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371435 > 28F016SA (Intel Corp.) 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器) PDF資料下載
參數(shù)資料
| 型號(hào)： | 28F016SA |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器) |
| 中文描述： | 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/55頁(yè) |
| 文件大小： | 849K |
| 代理商： | 28F016SA |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)
E
SEE NEW DESIGN RECOMMENDATIONS
December 1997
Order Number: 290489-005
n
User-Selectable 3.3 V or 5 V V
CC
n
User-Configurable x8 or x16 Operation
n
70 ns Maximum Access Time
n
28.6 MB/sec Burst Write Transfer Rate
n
1 Million Typical Erase Cycles per
Block
n
56-Lead, 1.2 mm x 14 mm x 20 mm
TSOP Package
n
56-Lead, 1.8 mm x 16 mm x 23.7 mm
SSOP Package
n
Revolutionary Architecture
Pipelined Command Execution
Program during Erase
Command Superset of Intel
28F008SA
n
1 mA Typical I
CC
in Static Mode
n
1 μA Typical Deep Power-Down
n
32 Independently Lockable Blocks
n
State-of-the-Art 0.6 μm ETOX IV Flash
Technology
Intel’s 28F016SA 16-Mbit FlashFile memory is a revolutionary architecture which is the ideal choice for
designing embedded direct-execute code and mass storage data/file flash memory systems. With innovative
capabilities, low-power, extended temperature operation and high read/program performance, the 28F016SA
enables the design of truly mobile, high-performance communications and computing products.
The 28F016SA is the highest density, highest performance nonvolatile read/program solution for solid-state
storage applications. Its symmetrically-blocked architecture (100% compatible with the 28F008SA 8-Mbit
FlashFile memory), extended cycling, extended temperature operation, flexible V
CC
, fast program and read
performance and selective block locking provide highly flexible memory components suitable for Resident
Flash Arrays, high-density memory cards and PCMCIA-ATA flash drives. The 28F016SA dual read voltage
enables the design of memory cards which can be interchangeably read/written in 3.3 V and 5.0 V systems.
Its x8/x16 architecture allows optimization of the memory-to-processor interface. Its high read performance
and flexible block locking enable both storage and execution of operating systems and application software.
Manufactured on Intel’s 0.6 μm ETOX IV process technology, the 28F016SA is the most cost-effective,
highest density monolithic 3.3 V FlashFile memory.
New Design Recommendations:
For new 3.3 V V
CC
designs with this device, Intel recommends using 16-Mbit Word-Wide FlashFile
memory. Reference Word-Wide FlashFile Memory Family 28F160S3, 28F320S3
datasheet, order number
290608. For new 3.3 V V
CC
x8 I/O designs with this device, Intel recommends using the 16-Mbit Byte-Wide
Smart 3 FlashFile memory. Reference Byte-Wide Smart 3 FlashFile Memory Family
datasheet, order
number 290598.
For new 5 V V
CC
designs with this device, Intel recommends using the 16-Mbit Word-Wide FlashFile
memory. Reference Word-Wide FlashFile Memory Family 28F160S5, 28F320S5
datasheet, order number
290609. For new 5 V V
CC
x8 I/O designs with this device, Intel recommends using the 16-Mbit Byte-Wide
Smart 5 FlashFile memory. Reference Byte-Wide Smart 5 FlashFile Memory Family
datasheet, order
number 290597.
These
documents
are
also
available
at
Intel’s
website,
http://www.intel.com/design/flcomp.
REFERENCE ONLY
28F016SA FlashFile MEMORY
Includes Commercial and Extended Temperature Specifications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F016XD | 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器) |
| 28F016XS | 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器) |
| 28F020 | 5 V Bulk Erase Flash Memory(5V 整體擦寫(xiě)閃速存儲(chǔ)器) |
| 28F128J3A | 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器) |
| 28F320J3A | 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F016SA/DD28F032SA | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:INFORMATION |
| 28F016SA-070 | 制造商:undefined 功能描述: |
| 28F016SC | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F016SV | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY |
| 28F016XD | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。