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參數(shù)資料
| 型號： | 2N2219A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL BIPOLAR NPN SILICON |
| 中文描述： | 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 56K |
| 代理商： | 2N2219A |
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2218A
2N2219A
TO-39
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2218A,19A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
40
75
6.0
800
800
4.57
3.0
17.1
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
PD
Tj, Tstg
-65 to +200
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN
40
75
6.0
-
MAX
-
-
-
10
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
Ta=150 deg C
VCB=60V, IE=0
VCE=60V, VEB=3V
VEB=3V, IC=0
VCE=60V, VEB=3V
-
-
-
-
-
10
10
10
20
0.3
1.0
uA
nA
nA
nA
V
V
V
V
ICEX
IEBO
IBL
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
0.6-1.2
2.0
Continental Device India Limited
Page 1 of 3
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com page 1
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| 2N2219A | SMALL SIGNAL BIPOLAR NPN SILICON |
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| 2N2219A | NPN switching transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N2219A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| 2N2219A_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SPEED SWITCHES |
| 2N2219A_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:SMALL SIGNAL BIPOLAR NPN SILICON |
| 2N2219A-B | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2219A-BP | 功能描述:兩極晶體管 - BJT 800mA 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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