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參數資料
型號: 2N2906A
廠商: Boca Semiconductor Corp.
英文描述: PNP SILICON PLANAR SWITCHING TRANSISTORS
中文描述: 進步黨硅平面開關晶體管
文件頁數: 1/2頁
文件大?。?/td> 44K
代理商: 2N2906A
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
60
60
5.0
600
400
2.28
1.8
10.3
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
Tj, Tstg
deg C
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN
60
60
5.0
-
MAX
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO*
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
-
-
-
10
Ta=150 deg C
VCB=50V, IE=0
VCE=30V, VBE=0.5V
VCE=30V, VBE=0.5V
-
-
-
-
10
50
50
0.4
1.6
1.3
2.6
uA
nA
nA
V
V
V
V
ICEX
IB
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
2N2906A
2N2907A
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
>40
>40
>40
40-120
>40
>75
>100
>100
100-300
>50
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
相關PDF資料
PDF描述
2N2906A Small Signal Transistors
2N2906A PNP SILICON PLANAR TRANSISTORS
2N2906A PNP SMALL SIGNAL SILICON TRANSISTOR
2N2906AL PNP SMALL SIGNAL SILICON TRANSISTOR
2N2906AUA PNP SMALL SIGNAL SILICON TRANSISTOR
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