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參數資料
| 型號： | 2N2906A |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP SMALL SIGNAL SILICON TRANSISTOR |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 文件頁數： | 1/2頁 |
| 文件大小： | 44K |
| 代理商： | 2N2906A |
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906A
2N2907A
TO-18
Switching And Linear Application DC to VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2906A, 07A
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25deg C
@ Tc=25 degC
Derate Above 25deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
VCEO
VCBO
VEBO
IC
PD
60
60
5.0
600
400
2.28
1.8
10.3
V
V
V
mA
mW
mW/deg C
PD
W
mW/deg C
Tj, Tstg
deg C
DESCRIPTION
SYMBOL
TEST CONDITION
VALUE
MIN
60
60
5.0
-
MAX
UNIT
V
V
V
nA
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO*
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=50V, IE=0
-
-
-
10
Ta=150 deg C
VCB=50V, IE=0
VCE=30V, VBE=0.5V
VCE=30V, VBE=0.5V
-
-
-
-
10
50
50
0.4
1.6
1.3
2.6
uA
nA
nA
V
V
V
V
ICEX
IB
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
Base Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
-
-
2N2906A
2N2907A
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V*
IC=500mA,VCE=10V*
>40
>40
>40
40-120
>40
>75
>100
>100
100-300
>50
http://www.bocasemi.com page: 1
Boca Semiconductor Corp.
BSC
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