- 您現在的位置：買賣IC網 > PDF目錄33225 > 2N3010 (AMERICAN MICROSEMICONDUCTOR INC) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 PDF資料下載
參數資料
| 型號： | 2N3010 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-18 |
| 封裝： | TO-18, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 237K |
| 代理商： | 2N3010 |
l
l
l
l
l
l
2N3010 Availability
Buy 2N3010 at our online store!
2N3010 Information
Category Transistors
Type Bipolar NPN
2N3010 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 6.0
V(BR)CBO (V) : 15
I(C) Max. (A) : 50m
Absolute Max. Power Diss. (W) : 300m
Minim um Operating Tem p (шC) :
Maxim um Operating Tem p (шC) : 175х
I(CBO) Max. (A) : 10uЧ
@V(CBO) (V) (Test Condition) :
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : .40
f(T) Min. (Hz) Transition Freq : 600M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
Power Gain Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Noise Figure Min. (dB) :
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Sem iconductor Material :
Package Style : TO-18
Mounting Style : T
Description :
Search Datasheets by Partnumber:
Or Browse Datasheets by Product Type:
Special Offers:
FREE UPS Ground Shipping on Orders above $150.00
Lanuage Translator:
Did you Know...
AMS has access to a network of m ore than 230,645,000 electronic com ponents? Com bine that with our top-notch custom er service and
rigorous quality control standards, and you'll find there is no better partner for all your sem iconductor and integrated circuit needs!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
Enter Your Part #
Type your question
here and click below ...
Submit
Continue
Diodes
Continue
Spanish
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3012.MOD | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3012 | 200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA |
| 2N3019-JQR-BE4 | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3019G4 | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3019-JQR-B | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3011 | 制造商: 功能描述: 制造商:Motorola Inc 功能描述: 制造商:undefined 功能描述: 制造商:All American Misc. 功能描述: |
| 2N3012 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| 2N3012CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed LCC1 |
| 2N3013 | 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3014 | 功能描述:兩極晶體管 - BJT NPN Fast SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。