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2N3467 Availability
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2N3467 Information
Category Transistors
Class Transistors; Bipolar; Si PNP Power
Type Transistors; Bipolar; Si PNP Power
2N3467 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 40
V(BR)CBO (V) : 40
I(C) Max. (A) : 1.0
Absolute Max. Power Diss. (W) : 1.0
Maximum Operating Temp (шC) : 200ю
I(CBO) Max. (A) : 100n
@V(CBO) (V) (Test Condition) : 30
V(CE)sat Max. (V) : 1.0
@I(C) (A) (Test Condition) : 1.0
@I(B) (A) (Test Condition) : 100m
h(FE) Min. Current gain. : 40
h(FE) Max. Current gain. : 125
@I(C) (A) (Test Condition) : 500m
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq : 175M
@I(C) (A) (Test Condition) : 50m
@V(CE) (V) (Test Condition) : 10
t(d) Max. (s) Delay time. : 10n
t(r) Max. (s) Rise time : 30n
t(on) Max. (s) On time. :
t(s) Max. (s) Storage time. : 60n
t(f) Max. (s) Fall time. : 30n
t(off) Max. (s) Off time :
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2N3467 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3467
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11/7/2009 2:00 AM