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參數資料
| 型號： | 2N3584LEADFREE |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 430K |
| 代理商： | 2N3584LEADFREE |
MAXIMUM RATINGS: (TC=25°C)
SYMBOL
2N3583
2N3584
2N3585
UNITS
Collector-Base Voltage
VCBO
250
375
500
V
Collector-Emitter Voltage
VCEO
175
250
300
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
1.0
2.0
A
Peak Collector Current
ICM
5.0
A
Continuous Base Current
IB
1.0
A
Power Dissipation
PD
35
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
ΘJC
5.0
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3583
2N3584
2N3585
SYMBOL
TEST CONDITIONS
MIN MAX
UNITS
ICEV
VCE=225V, VEB=1.5V
-
1.0
-
mA
ICEV
VCE=340V, VEB=1.5V
-
1.0
-
mA
ICEV
VCE=450V, VEB=1.5V
-
1.0
mA
ICEV
VCE=225V, VEB=1.5V, TC=150°C
-
3.0
-
mA
ICEV
VCE=300V, VEB=1.5V, TC=150°C
-
3.0
-
3.0
mA
ICEO
VCE=150V
-
10
-
5.0
-
5.0
mA
IEBO
VBE=6.0V
-
5.0
-
0.5
-
0.5
mA
BVCEO
IC=200mA
175
-
250
-
300
-
V
VCE(SAT) IC=1.0A, IB=125mA
-
5.0
-
0.75
-
0.75
V
VBE(SAT)
IC=1.0A, IB=100mA
-
1.4
-
1.4
V
VBE(ON)
VCE=10V, IC=1.0A
-
1.4
-
1.4
-
1.4
V
hFE
VCE=10V, IC=100mA
40
-
40
-
40
-
hFE
VCE=10V, IC=500mA
40
200
-
hFE
VCE=2.0V, IC=1.0A
-
8.0
80
8.0
80
hFE
VCE=10V, IC=1.0A
10
-
25
100
25
100
fT
VCE=10V, IC=200mA, f=5.0MHz
10
-
10
-
10
-
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
-
120
-
120
-
120
pF
hfe
VCE=30V, IC=100mA, f=1.0kHz
25
350
-
tr
VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω -
-
3.0
-
3.0
μs
ts
VCC=200V, IC=1.0A, IB1=IB2=100mA
-
4.0
-
4.0
μs
tf
VCC=200V, IC=1.0A, IB1=IB2=100mA
-
3.0
-
3.0
μs
Is/b
VCE=100V
350
-
350
-
350
-
mA
2N3583
2N3584
2N3585
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3583 Series
types are NPN Silicon Transistors designed for high
speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R2 (22-June 2011)
www.centra lsemi.com
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3584 | 5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3584 | 2 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N3585E1 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3585.MODE1 | 2 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3632 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3584X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N3585 | 功能描述:兩極晶體管 - BJT NPN High Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3585 | 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR 300V 2A TO-66 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 300V, 2A, TO-66 |
| 2N3589 | 制造商:General Electric Company 功能描述: |
| 2N3590 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SI NPN POWER BJT |
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