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參數資料
| 型號： | 2N3634E1 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 封裝： | HERMETIC SEALED, METAL, TO-39, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 108K |
| 代理商： | 2N3634E1 |
SILICON PNP TRANSISTOR
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 7744
Issue 2
Page 1 of 3
2N3634
General Purpose PNP Silicon Transistor
High Voltage, High Speed Saturated Switching
Low Power Amplifier Applications
Hermetic TO39 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T
C = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
-140V
VCEO
Collector – Emitter Voltage
-140V
VEBO
Emitter – Base Voltage
-5.0V
IC
Continuous Collector Current
-1.0A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
TC = 25°C
5.0W
Derate Above 25°C
28.6mW/°C
TJ
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max.
Unit
RθJA
Thermal Resistance, Junction To Ambient
175
°C/W
RθJC
Thermal Resistance, Junction To Case
35
°C/W
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3634.MOD | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3634UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3635UB | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3634 | 1000 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3634J | 制造商:MINNESOTA MINING AND MFG 功能描述: |
| 2N3634JANTX | 制造商:Microsemi Corporation 功能描述: |
| 2N3634L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 140V 1A 3PIN TO-5 - Bulk |
| 2N3634UB | 制造商:Microsemi Corporation 功能描述:PNP TRANSISTOR UB LAW - Gel-pak, waffle pack, wafer, diced wafer on film |
| 2N3635 | 功能描述:兩極晶體管 - BJT PNP Ampl/Switch RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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