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參數資料
| 型號： | 2N3710 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 218K |
| 代理商： | 2N3710 |
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2N3710 Information
Category Transistors
Class Transistors; Bipolar; Si NPN Low-Power
Type Bipolar; Si NPN Low-Power
2N3710 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 30
V(BR)CBO (V) : 30
I(C) Max. (A) : 30m
Absolute Max. Power Diss. (W) : 360m
Maximum Operating Temp (шC) : 150ю
I(CBO) Max. (A) : 100nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 90
h(FE) Max. Current gain. :
@I(C) (A) (Test Condition) : 1.0m
@V(CE) (V) (Test Condition) : 5.0
f(T) Min. (Hz) Transition Freq : 100M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
C(obo) (Max) (F) :
@V(CB) (V) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Package Style : TO-92
Mounting Style : T
Description :
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Page 1 of 2
2N3710 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra...
12-Apr-2011
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3710
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3714 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N3715 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3722 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 2N3725A | 1200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 2N3735 | 1500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3711 | 功能描述:兩極晶體管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3712 | 制造商:SSI 功能描述: |
| 2N3713 | 功能描述:兩極晶體管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3713 LEADFREE | 功能描述:兩極晶體管 - BJT NPN GP Power RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3713_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:EPITAXIAL-BASE TRANSISTORS |
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