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參數資料
| 型號： | 2N3767SMD-JQR-BR4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AB |
| 封裝： | CERAMIC, SMD1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | 2N3767SMD-JQR-BR4 |
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 2754
Issue 2
2N3767SMD
VCBO
Collector– Base Voltage (IE = 0)
VCEO
Collector– Emitter Voltage (IB = 0)
VEBO
Emiiter– Base Voltage (IB = 0)
IB
Base Current
IC
Collector Current
TJ ,TSTG
Operating and Storage Junction Temperature Range
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
100V
80V
6V
2A
4A
–55 to +150°C
25W
5°C/W
MECHANICAL DATA
Dimensions in mm (inches)
SMD1 (TO-276AB)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Base
Underside View
PIN 2 – Collector
PIN 3 – Emitter
3. 60 ( 0. 142)
Ma x .
3. 70 ( 0. 146)
3. 41 ( 0. 134)
3. 70 ( 0. 146)
3. 41 ( 0. 134)
0. 89
( 0 . 035)
mi n .
4.
14
(0.
163)
3.
84
(0.
151)
10.
69
(0
.4
21)
10.
39
(0
.4
09)
9. 67 ( 0. 381)
9. 38 ( 0. 369)
11. 58 ( 0 . 4 56)
11. 28 ( 0 . 4 44)
16.
02
(0
.6
31)
15.
73
(0
.6
19)
0. 50 ( 0. 020 )
0. 26 ( 0. 010 )
0.
76
(0
.030) mi
n.
13
2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
NPN BIPOLAR TRANSISTOR
IN A CERAMIC SURFACE MOUNT
PACKAGE FOR
HIGH REL APPLICATIONS
FEATURES
HIGH VOLTAGE
FAST SWITCHING
CERAMIC SURFACE MOUNT PACKAGE
SCREENING OPTIONS AVAILABLE
相關PDF資料 |
PDF描述 |
|---|---|
| 2N3767SMD05-JQR-AR4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N3767SMD05-JQR-B | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N3767SMD05R4 | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-276AA |
| 2N3767 | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA |
| 2N3772 | 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N376A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 |
| 2N377 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5 |
| 2N3771 | 功能描述:兩極晶體管 - BJT NPN Power Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3771 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-3 |
| 2N3771/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Power NPN Silicon Power Transistors |
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