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參數資料
型號: 2N4911XSMD05-JQR
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AA
封裝: HERMETICALLY SEALED, CERAMIC, SMD0.5, 3 PIN
文件頁數: 1/1頁
文件大小: 11K
代理商: 2N4911XSMD05-JQR
2
1
3
2.41 (0.095)
(0.030)
min.
3.05
(0.120)
5.72
(.225)
0.127 (0.005)
(0.296)
1
0
.16
(0.4
00
)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286)
7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
2N4911XSMD05
Bipolar NPN Device.
V
CEO =
60V
I
C = 4A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
60
V
I
C(CONT)
4
A
h
FE
@ 1/0.5 (V
CE / IC)
20
175
-
f
t
3M
Hz
P
D
15
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
15-Aug-02
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
PINOUTS
1 – Base
2 – Collector
3 – Emitter
SMD0.5 (TO276AA)
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相關代理商/技術參數
參數描述
2N4912 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 4A 2PIN TO-66 - Bulk 制造商:NTE Electronics 功能描述:T-NPN SI- AF PO
2N4912X 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE
2N4912XSMD05 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-276AA
2N4913 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 5A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Texas Instruments 功能描述:
2N4913_09 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON EPITAXIAL NPN TRANSISTOR
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