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參數資料
| 型號： | 2N5172 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-92, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 18K |
| 代理商： | 2N5172 |
DS21602 Rev. E-3
1 of 1
2N5172
2N5172
NPN SMALL SIGNAL TRANSISTOR
Features
High Current Gain
600 mW Power Dissipation
Maximum Ratings @ TA = 25°C unless otherwise specified
Electrical Characteristics @ TA = 25°C unless otherwise specified
Notes:
1.
These ratings are limiting values above which the serviceability of the semiconductor device may be impaired.
2.
These are steady state limits.
3.
These ratings are based on a maximum junction temperature of 150°C.
Mechanical Data
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connections: See Diagram
Marking: Type Number
Approx. Weight: 0.18 grams
Characteristic
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
VCBO
25
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
500
mA
Power Dissipation (Notes 2 & 3)
Pd
600
mW
Operating and Storage Temperature Range
Tj,TSTG
-55 to +150
°C
Characteristic
Symbol
Min.
Max
Unit
Test Condition
Collecto-Base Breakdown Voltage
V(BR)CBO
25
—
V
IC = 10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
25
—
V
IC = 10mA
Emitter- Base Breakdown Voltage
V(BR)EBO
5.0
—
V
IE = 10
A
Collector Cutoff Current
ICBO
—
100
nA
VCB = 25V
Emitter Cutoff Current
IEBO
—
100
nA
VEB = 5.0V
DC Current Gain
hFE
100
500
—
VCE = 10V
IC = 10mA
Collector-Emitter Saturation Voltage
VCE(SAT)
—
0.25
V
IC = 10mA
IB = 1.0mA
Base-Emitter On Voltage
VBE(ON)
0.5
1.2
V
VCE = 10V
IC = 10mA
Small Signal Current Gain
hfe
100
750
—
VCE = 10V
IC = 10mA
f = 1.0kHz
Collector-Base Capacitance
Ccb
1.6
10
pF
VCB = 10V
f = 1.0MHz
D
C
B
E
H
BOTTOM
VIEW
E
A
B
C
G
TO-92
Dim
Min
Max
A
4.32
4.83
B
4.32
4.78
C
12.50
15.62
D
0.36
0.56
E
3.15
3.94
G
2.29
2.79
H
1.14
1.40
All Dimensions in mm
POWER SEMICONDUCTOR
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