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參數資料
| 型號： | 2N5192 |
| 廠商： | 意法半導體 |
| 英文描述： | Medium Power NPN Silicon Transistors(NPN硅晶體管) |
| 中文描述： | 中功率NPN硅晶體管（npn型硅晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 64K |
| 代理商： | 2N5192 |
2N5191
2N5192
MEDIUM POWER NPN SILICON TRANSISTORS
I
SGS-THOMSON PREFERRED SALESTYPES
I
NPN TRANSISTOR
APPLICATIONS
I
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The
2N5191
and
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
2N5192
are
silicon
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Unit
V
V
V
A
A
A
W
o
C
o
C
2N5191
60
60
2N5192
80
80
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
5
4
7
1
40
-65 to 150
150
3
21
SOT-32
1/4
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5195 | Medium Power PNP Silicon Transistor(PNP硅晶體管) |
| 2N5195 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5193 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5194 | PNP SILICON TRANSISTOR GENERAL PURPOSE POWER |
| 2N5196 | Monolithic N-Channel JFET Duals |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5192 SL H | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件狀態:新產品 標準包裝:50 |
| 2N5192 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126 |
| 2N5192G | 功能描述:兩極晶體管 - BJT 4A 80V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5192R | 功能描述:PWR TRANSISTOR GP TH TO126 制造商:central semiconductor corp 系列:* 零件狀態:生命周期結束 標準包裝:1,000 |
| 2N5193 | 制造商:SPC Multicomp 功能描述:TRANSISTORPNP1A40VTO126 制造商:SPC Multicomp 功能描述:TRANSISTOR,PNP,1A,40V,TO126 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -40V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:40W; DC Collector Current:1A; DC Current Gain hFE:100; No. of Pins:3 ;RoHS Compliant: Yes |
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