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參數(shù)資料
| 型號： | 2N5199 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic N-Channel JFET Duals |
| 中文描述： | 單片N溝道場效應(yīng)偶 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 59K |
| 代理商： | 2N5199 |
2N5196/5197/5198/5199
Vishay Siliconix
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
www.vishay.com
8-1
Monolithic N-Channel JFET Duals
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Max (pA)
V
GS1
– V
GS2
Max (mV)
2N5196
–0.7 to –4
–50
1
–15
5
2N5197
–0.7 to –4
–50
1
–15
5
2N5198
–0.7 to –4
–50
1
–15
10
2N5199
–0.7 to –4
–50
1
–15
15
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 5 pA
Low Noise
High CMRR: 100 dB
Tight Differential Match vs. Current
Improved Op Amp Speed, Settling Time
Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signal
Wideband Differential Amps
High-Speed, Temp-Compensated,
Single-Ended Input Amps
High Speed Comparators
Impedance Converters
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
G
guaranteed at V
DG
= 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . .
–50 V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . .
–65 to 200 C
–55 to 150 C
Power Dissipation :
Per Side
a
Total
b
250 mW
500 mW
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2 mW/ C above 85 C
Derate 4 mW/ C above 85 C
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PDF描述 |
|---|---|
| 2N5199 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場效應(yīng)管) |
| 2N5196 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場效應(yīng)管) |
| 2N5197 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場效應(yīng)管) |
| 2N5198 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5199-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N520 | 制造商:. 功能描述: |
| 2N5200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| 2N5202 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 4A 2PIN TO-66 - Bulk |
| 2N5204 | 功能描述:SCR 600 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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