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參數資料
| 型號： | 2N5199 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結型場效應管) |
| 中文描述： | 單片雙N溝道場效應（最小柵源擊穿電壓- 50V的最大柵極工作電流，15pA的雙?溝道結型場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 92K |
| 代理商： | 2N5199 |
2N5196/5197/5198/5199
Siliconix
P-37514—Rev. C, 25-Jul-94
1
Monolithic N-Channel JFET Duals
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Max (pA)
V
GS1
– V
GS2
Max (mV)
2N5196
–0.7 to –4
–50
1
–15
5
2N5197
–0.7 to –4
–50
1
–15
5
2N5198
–0.7 to –4
–50
1
–15
10
2N5199
–0.7 to –4
–50
1
–15
15
Features
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 5 pA
Low Noise
High CMRR: 100 dB
Benefits
Tight Differential Match vs. Current
Improved Op Amp Speed, Settling Time Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signal
Applications
Wideband Differential Amps
High-Speed,
Temp-Compensated,
Single-Ended Input Amps
High Speed Comparators
Impedance Converters
Description
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide
range of precision test instrumentation applications. This
series features tightly matched specs, low gate leakage for
accuracy, and wide dynamic range with I
G
guaranteed at
V
DG
= 20 V.
The hermetically-sealed TO-71 package is available with
full military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423
data sheets.
TO-71
Top View
G
1
S
1
D
1
G
2
D
2
S
2
1
2
3
6
5
4
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–50 V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . .
–65 to 200 C
–55 to 150 C
. . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
Total
b
250 mW
500 mW
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 2 mW/ C above 85 C
Derate 4 mW/ C above 85 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70252.
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5196 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結型場效應管) |
| 2N5197 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結型場效應管) |
| 2N5198 | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結型場效應管) |
| 2N5202 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
| 2N6500 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5199-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N520 | 制造商:. 功能描述: |
| 2N5200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 100MA I(C) | TO-46 |
| 2N5202 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 50V 4A 2PIN TO-66 - Bulk |
| 2N5204 | 功能描述:SCR 600 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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