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參數資料
| 型號： | 2N5415 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | 2N5415 |
6 Lake Street, Lawrence, MA 01841
03/98 REV: E
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
MAXIMUM RATINGS
Ratings
Symbol
2N5415
2N5416
Units
Collector-Emitter Voltage
VCEO
200
300
Vdc
Collector-Base Voltage
VCBO
200
350
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation @ TA = +25
0C
@ TC = +25
0C
PT
0.75
10
W
Operating & Storage Junction
Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
17.5
0C/W
1) Derate linearly 4.28 mW/
0C for TA > +250C
2) Derate linearly 57.1 mW/
0C for TC > +250C
ELECTRICAL CHARACTERISTICS (TA = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
VCE = 150 Vdc
2N5415
VCE = 200 Vdc
VCE = 250 Vdc
2N5416
VCE = 300 Vdc
ICEO
50
1.0
50
1.0
Adc
mAdc
Adc
mAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
IEBO
20
Adc
Collector-Emitter Cutoff Current
VCE = 200 Vdc, VBE = 1.5 Vdc
2N5415
VCE = 300 Vdc, VBE = 1.5 Vdc
2N5416
ICEX
50
Adc
Collector-Base Cutoff Current
VCB = 175 Vdc
2N5415
VCB = 280 Vdc
2N5416
ICBO1
50
Adc
Collector-Base Cutoff Current
VCB = 200 Vdc
2N5415
ICBO2
500
Adc
TECHNICAL DATA
2N5415 JAN, JTX, JTXV
2N5416 JAN, JTX, JTXV
Processed per MIL-PRF-19500/485
PNP SILICON LOW-POWER TRANSISTOR
TO- 5
MIL-PRF
QPL
DEVICES
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5415 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR |
| 2N5415_00 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:SILICON PNP TRANSISTORS |
| 2N5415CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N5415CSM4_11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N5415JANTXV | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 200V 1A 3-Pin TO-5 |
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