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參數資料
| 型號： | 2N5416 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small Signal Transistors |
| 中文描述： | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 16K |
| 代理商： | 2N5416 |
ABSOLUTE MAXIMUM RATINGS
T
case
= 25°c unless otherwise stated
V
CBO
Collector – Base Voltage (I
E
=0)
V
CEO(sus)
Collector – Emitter Voltage (I
B
=0)
V
EBO
Emitter – Base Voltage (I
C
=0)
I
C
Collector Current
I
B
Base Current
P
tot
Total Device Dissipation atT
A
￡
25°C
T
stg
Storage Temperature
T
J
Junction Temperature
R
th-j-amb
Thermal Resistance Junction - Ambient
2N5415CSM4
2N5416CSM4
Prelim. 02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk1A
0.5A
1W
–65 to +200°C
175°C
150°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
2
3
4
(5.59 ± 0.13
(0.23
(1.02 ± 0.20
(2.03 ± 0.20
(01.40 ± 0.15
(0.25 ± 0.03
(0.23
1
(
3
(
0
(
PNP PLANAR EPITAXIAL TRANSISTOR
IN A HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE FOR HIGH
RELIABILITY APPLICATIONS
FEATURES
Silicon Planar PNP Transistor
Hermetic Ceramic Surface Mount Package
CECC Screening Options
Space quality Options
LCC3 PACKAGE
Underside View
PAD 1
–
Collector
PAD 2
–
N/C
PAD 3
–
Emitter
PAD 4
–
Base
2N5415
2N5416
-200V
-200V
-4V
-350V
-300V
-6V
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5415 | PNP LOW POWER SILICON TRANSISTOR |
| 2N5415S | PNP LOW POWER SILICON TRANSISTOR |
| 2N5416 | PNP LOW POWER SILICON TRANSISTOR |
| 2N5416S | PNP LOW POWER SILICON TRANSISTOR |
| 2N5416CSM4 | PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5416 | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP RF TO-39 |
| 2N5416CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| 2N5416JANTXV | 制造商:n/a 功能描述:2N5416 '87 |
| 2N5416MC | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP RF TO-39 |
| 2N5416S | 制造商: 功能描述: 制造商:undefined 功能描述: |
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