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參數資料
| 型號： | 2N5655 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Plastic Silicon NPN Power Transistor(塑料硅NPN功率晶體管) |
| 中文描述： | 0.5 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | 2N5655 |
Semiconductor Components Industries, LLC, 2006
October, 2006 Rev. 9
1
Publication Order Number:
2N5655/D
2N5655, 2N5657
Plastic NPN Silicon
HighVoltage Power
Transistor
These devices are designed for use in lineoperated equipment such
as audio output amplifiers; lowcurrent, highvoltage converters; and
AC line relays.
Features
Excellent DC Current Gain
h
FE
= 30250 @ I
C
= 100 mAdc
CurrentGain Bandwidth Product
f
T
= 10 MHz (Min) @ I
C
= 50 mAdc
PbFree Packages are Available*
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
T
J
, T
stg
–65 to +150
Peak
1.0
Base Current
Total Device Dissipation @ T
= 25
°
C
I
1.0
Adc
W
Operating and Storage Junction
C/W
JunctiontoCase
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
250350 VOLTS, 20 WATTS
MARKING DIAGRAM
TO225AA
CASE 7709
STYLE 1
Y
WW
2N565x
= Year
= Work Week
= Device Code
x = 5 or 7
= PbFree Package
G
2N5657
2N5657G
TO225
TO225
(PbFree)
500 Units / Bulk
500 Units / Bulk
Device
Package
Shipping
2N5655
2N5655G
TO225
TO225
(PbFree)
500 Units / Bulk
500 Units / Bulk
ORDERING INFORMATION
YWW
2
N565xG
相關PDF資料 |
PDF描述 |
|---|---|
| 2N5657 | Plastic Silicon NPN Power Transistor(塑料硅NPN功率晶體管) |
| 2N5656 | Plastic Silicon NPN Power Transistor(0.5A，20W，300V（集電極-發射極），塑料硅NPN功率晶體管) |
| 2N5659 | HIGH SPEED NPN TRANSISTOR 120 VOLTS |
| 2N5006 | HIGH SPEED NPN TRANSISTOR 120 VOLTS |
| 2N5008 | HIGH SPEED NPN TRANSISTOR 120 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5655/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic NPN Silicon High-Voltage Power Transistor |
| 2N5655_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic NPN Silicon High−Voltage Power Transistor |
| 2N5655G | 功能描述:兩極晶體管 - BJT 1A 250V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5656 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2N5657 | 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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