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參數資料
| 型號： | 2N5912 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Matched N-Channel JFET Pairs(最小柵源擊穿電壓-25V，柵極工作電流-1pA的N溝道結型場效應管) |
| 中文描述： | 匹配N溝道場效應對（最小柵源擊穿電壓- 25V的，柵極工作電流，僅為1pA的N溝道結型場效應管） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 79K |
| 代理商： | 2N5912 |
2N5911/5912
Siliconix
P-37407—Rev. C, 04-Jul-94
1
Matched N-Channel JFET Pairs
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
G
Typ (pA)
V
GS1
– V
GS2
Max (mV)
2N5911
–1 to
–25
5
–1
10
2N5912
–1 to
–25
5
–1
15
Features
Two-Chip Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 1 pA
Low Noise
High CMRR: 85 dB
Benefits
Minimum Parasitics Ensuring Maximum
High-Frequency Performance
Improved Op Amp Speed, Settling Time Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signal
Applications
Wideband Differential Amps
High-Speed, Temp-Compensated,
Single-Ended Input Amps
High Speed Comparators
Impedance Converters
Description
The 2N5911/5912 are matched pairs of JFETs mounted in
a TO-78 package. This two-chip design reduces parasitics
and gives better performance at high frequencies while
ensuring extremely tight matching.
The hermetically-sealed TO-78 package is available with
full military screening per MIL-S-19500 (see Military
Information).
For similar products see the SO-8 packaged
SST440/SST441, the TO-71 packaged U440/U441, the
low-noise SST/U401 series, and the low-leakage
U421/423 data sheets.
TO-78
Top View
G
1
S
1
D
1
G
2
D
2
S
2
Case
1
2
3
7
6
5
4
Absolute Maximum Ratings
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Storage Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–25 V
80 V
50 mA
300 C
. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
–65 to 200 C
–55 to 150 C
. . . . . . . . . . . . . . . . . .
Power Dissipation :
Per Side
a
Total
b
367 mW
500 mW
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Notes
a.
b.
Derate 3 mW/ C above 25 C
Derate 4 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70255.
Applications information may also be obtained via FaxBack, request document #70595.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N5912 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET DUAL N TO-78 |
| 2N5912_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912C_TO-71 | 制造商:MICROSS 制造商全稱:MICROSS 功能描述:MONOLITHIC DUAL N-CHANNEL JFET |
| 2N5912-E3 | 功能描述:JFET 25V 1pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5913 | 制造商:STMicroelectronics 功能描述:2N5913 |
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