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參數(shù)資料
| 型號： | 2N6049.MOD |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 封裝： | HERMETIC SEALED, METAL, TO-66, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N6049.MOD |
2N6049
Bipolar PNP Device.
V
CEO =
55V
I
C = 4A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
55
V
I
C(CONT)
4
A
h
FE
@ 4/0.5 (V
CE / IC)
25
100
-
f
t
3M
Hz
P
D
75
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar PNP Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
24.13
(0.95)
24.63
(0.97)
14.48
(0.570)
14.99
(0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0.71
(0.028)
0.86
(0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94
(0.470)
12.70
(0.500)
1
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6049E.MOD | 4 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6049ER1 | 4 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6049E.MODR1 | 4 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6049E | 4 A, 55 V, PNP, Si, POWER TRANSISTOR, TO-213AA |
| 2N6052 | 12 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6050 | 功能描述:達林頓晶體管 PNP Pwr Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6050_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:POWER COMPLEMENTARY SILICON TRANSISTORS |
| 2N6050MOT87 | 制造商:Motorola 功能描述:2N6050 |
| 2N6051 | 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON PNP 80V 12A 2PIN TO-3 - Bulk 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR TO-3 制造商:SPC Multicomp 功能描述:DARLINGTON TRANSISTOR, TO-3 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -80V, TO-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:150W; DC Collector Current:12A; DC Current Gain hFE:18000; No. of Pins:2 ;RoHS Compliant: Yes |
| 2N6051 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3 |
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