欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2N6349
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: 8 Ampere RMS Silicon Bidirectional Thyristor(8A(均方根值),800V硅雙向晶閘管)
中文描述: 800 V, 8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-220AB
封裝: CASE 221A-07, 3 PIN
文件頁數: 1/8頁
文件大?。?/td> 87K
代理商: 2N6349
Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 1
1
Publication Order Number:
2N6344/D
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in all Four Quadrants
For 400 Hz Operation, Consult Factory
Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
*Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +110
°
C, Sine Wave 50 to
60 Hz, Gate Open)
Symbol
Value
Unit
2N6344
2N6349
VDRM,
VRRM
600
800
Volts
*On–State RMS Current
(TC = +80
°
C)
Full Cycle Sine Wave 50 to 60 Hz
(TC = +90
°
C)
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25
°
C)
Preceded and followed by rated current
IT(RMS)
8.0
4.0
Amps
ITSM
100
Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2s
*Peak Gate Power
(TC = +80
°
C, Pulse Width = 2
μ
s)
PGM
20
Watts
*Average Gate Power
(TC = +80
°
C, t = 8.3 ms)
PG(AV)
0.5
Watt
*Peak Gate Current
(TC = +80
°
C, Pulse Width = 2.0
μ
s)
IGM
2.0
Amps
*Peak Gate Voltage
(TC = +80
°
C, Pulse Width = 2.0
μ
s)
VGM
10
Volts
*Operating Junction Temperature Range
TJ
–40 to
+125
°
C
*Storage Temperature Range
Tstg
–40 to
+150
°
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
2N6344
TO220AB
500/Box
2N6349
TO220AB
TO–220AB
CASE 221A
STYLE 4
123
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
500/Box
MT1
G
MT2
Preferred
devices are recommended choices for future use
and best overall value.
相關PDF資料
PDF描述
2N6350 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6351 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6352 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6353 NPN DARLINGTON POWER SILICON TRANSISTOR
2N6362 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
相關代理商/技術參數
參數描述
2N6349A 功能描述:雙向可控硅 THY 12A 800V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態電壓: 保持電流(Ih 最大值):45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
2N6349AG 功能描述:雙向可控硅 雙向可控硅 RoHS:否 制造商:STMicroelectronics 開啟狀態 RMS 電流 (It RMS):16 A 不重復通態電流:120 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態電壓: 保持電流(Ih 最大值):45 mA 柵觸發電壓 (Vgt):1.3 V 柵觸發電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
2N634A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-9
2N635 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
2N6350 制造商:Microsemi Corporation 功能描述:Trans Darlington NPN 80V 5A 4-Pin TO-33 制造商:Microsemi Corporation 功能描述:TRANS DARLINGTON NPN 80V 5A 4PIN TO-33 - Bulk
主站蜘蛛池模板: 西乌珠穆沁旗| 达孜县| 宜君县| 舟曲县| 康马县| 安塞县| 瑞金市| 浦城县| 瑞昌市| 岳阳市| 子长县| 都匀市| 长葛市| 和龙市| 德州市| 阿克苏市| 库尔勒市| 邹平县| 香河县| 璧山县| 大悟县| 清河县| 枣阳市| 陵川县| 峨眉山市| 乐清市| 祥云县| 吉安市| 达州市| 贡山| 乌海市| 昭苏县| 时尚| 商都县| 高阳县| 磴口县| 曲麻莱县| 顺平县| 大竹县| 娄底市| 德兴市|