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參數資料
| 型號： | 2N6394 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 中文描述： | 12 A, 50 V, SCR, TO-220AB |
| 封裝： | CASE 221A, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 112K |
| 代理商： | 2N6394 |
1
Motorola Thyristor Device Data
Motorola, Inc. 1999
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
Blocking Voltage to 800 Volts
*MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(Gate Open, TJ = –40 to 125
°
C)
2N6394
2N6395
2N6397
2N6398
2N6399
VDRM, VRRM
50
100
400
600
800
Volts
RMS On–State Current (TC = 90
°
C) (All Conduction Angles)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 125
°
C)
IT(RMS)
ITSM
12
Amps
100
Amps
Circuit Fusing (t = 8.3 ms)
I2t
40
A2s
Forward Peak Power
PGM
PG(AV)
IGM
TJ
Tstg
20
Watts
Forward Average Gate Power
0.5
Watt
Forward Peak Gate Current
2
Amps
Operating Junction Temperature Range
–40 to +125
°
C
Storage Temperature Range
–40 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
2
°
C/W
*Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6394/D
SEMICONDUCTOR TECHNICAL DATA
REV 1
CASE 221A-07
(TO-220AB)
STYLE 3
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
K
A
G
Motorola preferred devices
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6395 | SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6397 | SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6398 | SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6399 | SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6399 | 12 Ampere RMS Reverse Blocking Thyristor(12A（均方根值），800V硅控整流器反向截止晶閘管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6394/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon Controlled Rectifiers |
| 2N6394_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 50 thru 800 VOLTS |
| 2N6394G | 功能描述:SCR 50V 12A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6394TG | 功能描述:SCR THY 12A 50V SCR RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| 2N6395 | 功能描述:SCR 100V 12A RoHS:否 制造商:STMicroelectronics 最大轉折電流 IBO:480 A 額定重復關閉狀態電壓 VDRM:600 V 關閉狀態漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態 RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
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