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參數資料
| 型號： | 2N6426RLRAG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Darlington Transistors NPN Silicon |
| 中文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-11, TO-226, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 2N6426RLRAG |
Semiconductor Components Industries, LLC, 2007
March, 2007 Rev. 3
1
Publication Order Number:
2N6426/D
2N6426, 2N6427
2N6426 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
40
Vdc
Collector Base Voltage
V
CBO
40
Vdc
Emitter Base Voltage
V
EBO
12
Vdc
Collector Current Continuous
I
C
500
mAdc
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
625
5.0
mW
mW/
°
C
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
1.5
12
W
mW/
°
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
R
JA
200
°
C/W
Thermal Resistance, JunctiontoCase
R
JC
83.3
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
MARKING DIAGRAM
2N
642x
AYWW
x
A
Y
WW = Work Week
= PbFree Package
(Note: Microdot may be in either location)
= 6 or 7
= Assembly Location
= Year
123
12
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO92
CASE 29
STYLE 1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6427 | 功能描述:達林頓晶體管 NPN Darl Amp RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6427_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| 2N6427_D26Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6427_D27Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6427_D75Z | 功能描述:達林頓晶體管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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