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參數資料
| 型號： | 2N6661 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | 2N6661 |
* Pulse width limited by maximum junction temperature.
Prelim. 6/94
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk2N6661
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
Switching Regulators
Converters
Motor Drivers
V
DS
V
GS
I
D
I
D
I
DM
P
D
P
D
T
j
T
stg
T
L
Drain – Source Voltage
Gate – Source Voltage
Drain Current
Drain Current
Pulsed Drain Current *
Power Dissipation
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
@ T
CASE
= 25°C
@ T
CASE
= 100°C
@ T
CASE
= 25°C
@ T
CASE
= 100°C
90V
±20V
0.9A
0.7A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
CASE
= 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
LA B
S E M E
(0.89
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6661 | TMOS SWITCHING FET TRANSISTORS |
| 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6673 | Bipolar NPN Device |
| 2N6673 | POWER TRANSISTORS TO-3 CASE |
| 2N6673 | HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6661_10 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6661_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 90 V (D-S) MOSFET |
| 2N6661-2 | 功能描述:MOSFET 90V 0.86A 6.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2N6661CSM4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6661DCSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:DUAL N–CHANNEL ENHANCEMENT MODE |
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