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參數資料
| 型號： | 2N6667 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 168K |
| 代理商： | 2N6667 |
3–1
Motorola Bipolar Power Transistor Device Data
Darlington Silicon
Power Transistors
. . . designed for general–purpose amplifier and low speed switching applications.
High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc
Collector–Emitter Sustaining Voltage — @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6667
VCEO(sus) = 80 Vdc (Min) — 2N6668
Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
TO–220AB Compact Package
Complementary to 2N6387, 2N6388
COLLECTOR
EMITTER
[ 8 k
[ 120
Figure 1. Darlington Schematic
BASE
MAXIMUM RATINGS (1)
Rating
Symbol
2N6667
2N6668
Unit
Collector–Emitter Voltage
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
60
80
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
— Peak
IC
10
15
Adc
Base Current
IB
250
mAdc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
65
0.52
watts
W/
_C
Total Device Dissipation @ TA = 25_C
Derate above 25
_C
PD
2
0.016
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.92
_C/W
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
(1) Indicates JEDEC Registered Data.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6667/D
2N6609
(See 2N3773)
Motorola, Inc. 1995
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
60 – 80 VOLTS
65 WATTS
CASE 221A–06
TO–220AB
REV 1
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6667 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2N6668BU | 10 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2N6667BD | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6667BA | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2N6667AF | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N6667_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W |
| 2N6667_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Silicon Power Transistors |
| 2N6667G | 功能描述:達林頓晶體管 10A 60V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6668 | 功能描述:兩極晶體管 - BJT PNP Pwr Darlington RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6668 | 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-220 |
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