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參數資料
| 型號： | 2N6978 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 5A, 400V and 500V N-Channel IGBTs |
| 中文描述： | 5 A, 500 V, N-CHANNEL IGBT, TO-204AA |
| 文件頁數： | 1/4頁 |
| 文件大小： | 40K |
| 代理商： | 2N6978 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
Harris Corporation 1995
3-1
Semiconductor
Package
JEDEC TO-204AA
BOTTOM VIEW
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER
2N6975
2N6976
2N6977
2N6978
NOTE: When ordering, use the entire part number.
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Features
5A, 400V and 500V
V
CE(ON)
2V
T
FI
1
μ
s, 0.5
μ
s
Low On-State Voltage
Fast Switching Speeds
High Input Impedance
Applications
Power Supplies
Motor Drives
Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
April 1995
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Specified.
2N6975/2N6977
(Note 1)
400
400
5
±
20
5
10
100
0.8
-55 to +150
2N6976/2N6978
(Note 1)
500
500
5
±
20
5
10
100
0.8
-55 to +150
UNITS
V
V
V
V
A
A
W
W/
o
C
o
C
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CES
Collector-Gate Voltage (R
GE
= 1M
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
Reverse Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CES(REV.)
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GE
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Power Dissipation Derating T
C
> +25
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
J
, T
STG
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2297.2
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相關代理商/技術參數 |
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|---|---|
| 2N697A | 功能描述:兩極晶體管 - BJT NPN Med Pwr RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N697S | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3PIN TO-5 - Bulk |
| 2N698 | 制造商:Powerex Power Semiconductors 功能描述: |
| 2N6985 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16A I(C) | RFMOD |
| 2N6986 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 16A I(C) | RFMOD |
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