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參數資料
型號: 2N7000
廠商: GE Security, Inc.
英文描述: DMOS Transistors (N-Channel)
中文描述: DMOS晶體管(N溝道)
文件頁數: 1/5頁
文件大?。?/td> 232K
代理商: 2N7000
FEATURES
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
DMOS Transistors (N-Channel)
G
D
S
.181 (4.6)
mi
n.
.492
(12.5)
.181
(
4
.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max.
.022 (0.55)
4/98
2N7000
High input impedance
Low gate threshold voltage
Low drain-source ON resistance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
Inverse Diode
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
Gate-Source Voltage (pulsed)
VGS
± 20
V
Drain Current (continuous)
ID
300
mA
Power Dissipation at Tamb = 25 °C
Ptot
8301)
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Symbol
Value
Unit
Max. Forward Current (continuous)
at Tamb = 25 °C
IF
500
mA
Forward Voltage Drop (typ.)
at VGS = 0, IF = 0.5 A, Tj = 25 °C
VF
850
mV
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相關代理商/技術參數
參數描述
2N-7000 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2N7000 AMO 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000,126 功能描述:MOSFET TRENCH 31V-99V G2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-92
2N7000/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps, 60 Volts
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